| PART |
Description |
Maker |
| SFS1002G SFS1005G |
Discrete Devices -Diode-Super Fast Rectifier
|
Taiwan Semiconductor
|
| 2FAL-M16R |
Integrated Passive & Active Devices
|
BOURNS[Bourns Electronic Solutions]
|
| 2FAG-M12R 2FAG-M12R07 |
Integrated Passive & Active Devices
|
Bourns Electronic Solut...
Bourns Electronic Solutions
|
| 2FAF-M8R |
Integrated Passive & Active Devices
|
BOURNS[Bourns Electronic Solutions]
|
| VT82C686B |
PCI Super-I/O Integrated Peripheral Controller
Super South / South Bridge
|
ETC[ETC]
VIA
|
| SC196AMLTRT SC196AEVB SC196A |
1.5A Synchronous Buck Converter with Integrated Power Devices
|
Semtech Corporation
|
| KB-H100SRW |
The Super Bright Red source color devices SINGLE COLOR LED, SUPER BRIGHT RED, 19.05 mm
|
Kingbright, Corp.
Kingbright Corporation.
KINGBRIGHT[Kingbright Corporation]
Kingbright Electronic
|
| WP710A10SGD5V |
The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode.
|
Kingbright Corporation
|
| DMS2220LFDB DMS2220LFDB-7 |
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR垄莽 SUPER BARRIER RECTIFIER
|
Diodes Incorporated
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LPC61W492 |
Integrated Super I/O Controller for LPC Bus with Game and MIDI Ports/Plus Hardware Monitoring Functions
|
Standard Microsystems
|
